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TIP142T TIP147T
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s s s
s s s
STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN
3 1 2
s
APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mounted in TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP type is TIP147T. TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5ms) Base Current Total Dissipation at T case 25 o C Storage Temperature Max. Operating Junction Temperature Value TIP142T TIP147T 100 100 5 15 20 0.5 90 - 65 to 150 150 V V V A A A W
o o
Unit
C C
For PNP types voltage and current values are negative.
June 1998
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TIP142T / TIP147T
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.38
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CE = 50 V V EB = 5 V I C = 30 mA 100 Min. Typ. Max. 1 2 2 Unit mA mA mA V
VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * V BE(on) * h FE * Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain RESISTIVE LOAD Turn-on Time Turn-off Time
IC = 5 A I C = 10 A I C =10 A IC = 5 A I C = 10 A IC = 10 A I B2 = -40 mA
I B = 10 mA I B = 40 mA V CE = 4 V V CE = 4 V V CE = 4 V I B1 = 10 mA RL = 3 1000 500 0.9 4
2 3 3
V V V
t on t off
ms s
For PNP types voltage and current values are negative. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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TIP142T / TIP147T
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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TIP142T / TIP147T
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .
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